| [摘要] | ||
| 本篇論文探討在低溫多晶矽製程上,實現液晶顯示器驅動電路之可行性。液晶顯示器的驅 | ||
| 動電路可分為閘級驅動電路及源級驅動電路:其中閘級驅動電路包含移位暫存器、電位轉 | ||
| 換器和輸出緩衝器;而源級驅動電路是由移位暫存器、閂鎖器、電位轉換器、數位電類比 | ||
| 轉換器及輸出電壓緩衝器組成。 | ||
| 本篇論文著重於源級驅動電路的輸出電壓緩衝器之設計。顧及液晶分子對電場所具有的獨 | ||
| 特性及顯示畫面品質的良窳,此一輸出電壓緩衝器具有特殊的輸入訊號和操作方式,以及 | ||
| 嚴格要求的靜態功率消耗及電路面積。在此,我們設計一個具有高迴轉率及低消耗功率、 | ||
| 密集電路面積的AB類電壓輸出緩衝器,並以VIS 0.35μm 2P4M 18V process實現之。然而 | ||
| 在低溫多晶矽製程上,由於臨界電壓漂移及元件本身的扭結效應(kink effect)影響,一個 | ||
| 較可能接受的設計方法是,在電壓輸出緩衝器中儘可能少用偏壓電流源。在此,我們也提 | ||
| 出一個B類輸出緩衝器,並以Toppoly 6μm LTPS 1P2M process實現之。而為了能夠比較兩 | ||
| 者的表現,我們以同樣的負載電路模組做測試。 | ||
| 最後,我們利用低溫多晶矽薄膜電晶體的特性,嘗試把其元件的基底接出來,並利用它來 | ||
| 控制元件的臨界電壓。利用這項技術,我們設計了四種電位轉換器來驗證,並將其應用在 | ||
| 液晶顯示器的閘級驅動電路。結果證明在適當的基底電壓偏壓之下,電位轉換器可工作於 | ||
| 更低的輸入電壓訊號。 | ||
| [摘要] | ||
| In this thesis, the possibility to implement the driving circuits for LCD in | ||
| LTPS technology is discussed. The driving circuits for LCD can be divided into | ||
| two groups, the gate driver and the data driver. Gate driver includes shift | ||
| registers, level shifters, and output buffers. Data driver consists of shift | ||
| registers, latches, level shifters, a digital to analog converter, and output | ||
| buffers. | ||
| The design of output buffers in the source driver is focused in this thesis. | ||
| Considering the characteristic of liquid crystal molecule to electrical field | ||
| and the quality of display, the output buffer must satisfy a particular input | ||
| pattern and operating method. Moreover, it should achieve low quiescent power | ||
| and small circuit layout area. A class-AB output buffer, which can be operated | ||
| with high slew rate, low power and small layout area, has been designed and | ||
| realized in VIS 0.35μm 2P4M 18V process. However, in LTPS technology the | ||
| current source is significantly affected by threshold voltage drift and the | ||
| kink effect. Therefore, a proposed way to design output voltage buffer is to | ||
| use bias current source as less as possible. Thus, a class-B output buffer has | ||
| been proposed and implemented in Top poly 6μm LTPS 1P2M process. In order to | ||
| compare both of their performance, these two buffers with the same loading are | ||
| measured. | ||
| Finally, according to the characteristic of TFT, its body is connected out to | ||
| control the threshold voltage of device. Four kinds of level shifters to proof | ||
| our idea have been designed to apply them in the gate driver of LCD. The | ||
| measurement results confirm that the level shifters can be operated with lower | ||
| input signals by applying adapted bias voltage to body. | ||